The unique role of silicon in semiconductor technology is due largely to the remarkable properties of the Si—SiO2 interface, especially the (001)-oriented interface used in most …
A challenge in the experimental and theoretical study of SiO 2 is its propensity to amorphize on compression 7. At room temperature only the application …
High-energy electrons are leading to the formation of amorphous silicon in SiO 2 film. •. The formation of amorphous silicon in SiO 2 film is attributed to the displacement of oxygen atoms. •. The displaced oxygen atoms can form dioxygen ions …
An investigation of the optical and electronic properties of amorphous silicon dioxide by means of a combination of reflection electron energy loss spectroscopy …
Silicon dioxide (SiO 2 ), commonly known as silica, is found naturally in several crystalline forms, the most notable being quartz. Additionally, when silicon dioxide is manufactured …
One of the key elements in advancing further understanding about the structure and bonding of SiO 2 is the detailed knowledge of the electronic structures of various forms …
Silicon dioxide exists naturally in the crystalline form known as quartz. Actually, quartz crystallizes with difficulty but the "geological" times allow to obtain well …
Starting from an idealized interface between Si and a crystalline form of SiO 2, the computer simulation generates a more realistic interface between Si and a …
In this contribution, realistic amorphous SiO2 models of 2.1 × 2.1 nm with silanol densities ranging 1.1–7.2 OH per nm2 are obtained by means of ab initio calculations via the dehydroxylation of a fully …
Ag decorated honeycomb silicon structure (HCSi) was prepared by magnesiothermic reduction of the synthesized SiO2 and investigated as a potential …
